A very high charge, high polarization gradient-doped strained GaAs photocathode
نویسندگان
چکیده
منابع مشابه
A very high charge, high polarization gradient-doped strained GaAs photocathode
A high-gradient-doping technique is applied to strained polarized photocathodes. A 5.0–7:5 nm p-type surface layer doped to 5 10 cm 3 is found sufficient to overcome the surface charge limit while maintaining high beam polarization. This technique can be employed to meet the charge requirements of the Next Linear Collider with a polarization approaching 80%. r 2002 Elsevier Science B.V. All rig...
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ژورنال
عنوان ژورنال: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
سال: 2002
ISSN: 0168-9002
DOI: 10.1016/s0168-9002(02)01290-1